ZnO∶Al绒面透明导电薄膜性能研究  

Properties of Texture-etched ZnO∶Al Substrates

作　　者：薛俊明[1] 黄宇[1] 熊强[2] 马铁华[3] 孙建[1] 赵颖[1] 耿新华[1] 

机构地区：[1]南开大学光电信息科学技术教育部重点实验室,天津300071 [2]河北省信息产业厅唐山无线电管理分局,河北唐山063000 [3]中北大学仪器科学与动态测试教育部重点实验室,山西太原030051

出　　处：《兵工学报》2008年第4期504-508,共5页Acta Armamentarii

基　　金：天津市科技发展计划项目(06YFGZGX02100);国家“973”重点基础研究项目(2006CB202602和2006CB202603)

摘　　要：利用中频脉冲磁控溅射方法,以掺杂质量2%Al的Zn(纯度99.99%)金属材料为靶材制备平面透明导电ZnO∶Al(ZAO)薄膜,利用湿法腐蚀方法,将平面ZAO薄膜在一定浓度的稀盐酸中浸泡一定时间,使其形成表面凹凸起伏的绒面结构。研究了溅射功率、工作压力、腐蚀时间以及溶液浓度对绒面ZAO薄膜表面形貌的影响,并对腐蚀前后薄膜的电阻变化进行了分析。结果表明:低功率、低气压、腐蚀时间20 s、溶液浓度0.5%的条件下制备的绒面ZAO薄膜表面形貌较好,在硅薄膜太阳电池中具有潜在应用前景。Using a 2% A1-doped Zn target, ZnO： A1（ZAO）thin films were deposited on a glass substrate by mid-frequency pulsed magnetron sputtering. The texture-etched ZAO substrates were prepared by etching the smooth films in diluted HCl. The dependence of surface textures on power, pres- sure, etching time and diluted HCl chroma were investigated, and the resistivity of ZAO films before and after etching in diluted HCl were analyzed. The results indicate that the good surface textures of ZAO thin films could be prepared under the conditions of low power, low pressure, etching time of 20 s and diluted HCl chroma of 0.5 %, such ZAO thin film has the potential application in silicon thin film solar cells.

关 键 词：凝聚态物理学 中频脉冲磁控溅射 ZnO:A1薄膜 绒面 溅射功率 工作气压 

分 类 号：TM914.42[电气工程—电力电子与电力传动]