基于直流磁控溅射室温制备ZnO薄膜研究  

Preparation Research of ZnO Thin Films at Room-temperature by DC Magnetron Sputtering

作　　者：赵晓锋[1] 温殿忠[2] 高来勖[1] 

机构地区：[1]黑龙江大学黑龙江省普通高等学校电子工程重点实验室,哈尔滨150080 [2]黑龙江大学集成电路重点实验室,哈尔滨150080

出　　处：《人工晶体学报》2008年第2期461-465,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金项目(No.60676044);黑龙江省教育厅科学技术研究项目(No.11521215);电子工程黑龙江省高校重点实验室项目(DZZD2006-12)

摘　　要：采用直流磁控溅射法在p型<100>晶向单晶硅衬底上室温制备ZnO薄膜,对室温制备的ZnO薄膜分别在500℃、600℃、700℃进行高温退火,通过采用X射线衍射(XRD)、拉曼光谱和场发射扫描电子显微镜(SEM)、HP4145B型半导体参数测试仪分析不同退火温度对室温生长ZnO薄膜微结构、表面形貌和I-V特性影响。实验结果表明,室温生长的ZnO薄膜为非晶态,随退火温度增加,ZnO薄膜出现(002)、(100)、(101)晶面衍射峰且逐渐增强,晶粒大小相对增加,在700℃退火后,呈高度c轴择优取向,晶粒间界明显,拉曼光谱E2模增强。ZnO thin films were grown on p-type single-crystalline Si 〈 100 〉 substrates at room temperature by DC magnetron sputtering method and were annealed at higher temperature of 500 ℃ ,600℃ ,700℃ respectively. X-ray diffraction （XRD）, Raman spectra and field emission scanning electron microscopy （SEM）, HP4145B parameter analyzer were used to analyze the effect of different annealing temperatures on mierostrueture, surface appearance and I-V characteristics of the ZnO thin films. Result of the experiment shows that ZnO thin films grown at room temperature are non-crystalline, and their diffraction peaks occur in （002）, （100） and （101） planes respectively and strengthen with the increasing annealing temperatures gradually, grain sizes also increase comparably after the 700℃ annealing, a good highly c-axis-orientation occurs, grain boundaries are obvious, and Ranman spectrum E2 mode strengthens.

关 键 词：直流磁控溅射 ZNO薄膜 晶粒 晶粒间界 

分 类 号：TM614[电气工程—电力系统及自动化]