磁控溅射法制备具有同质缓冲层的PST薄膜  

Preparation PST Thin Films with Homogeneity Buffer Layer by RF Magnetron Sputtering Method

作　　者：李敏睿[1] 杜丕一[1] 袁东升[2] 王问斯[2] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027 [2]武汉军械士官学校金属工艺教研室,湖北武汉430075

出　　处：《压电与声光》2008年第3期337-339,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(50372057和50332030);教育部高等学校博士专项科研基金资助项目(20020335017)

摘　　要：采用射频磁控溅射法制备了以低功率溅射得到的PbxSr1-xTiO3(PST)薄膜为缓冲层(同质缓冲层)的PST双层薄膜。通过X-射线衍射、扫描电镜、阻抗分析仪和铁电分析仪对薄膜相结构、表面形貌、介电损耗和铁电性能进行了测试分析。结果表明,以低功率溅射得到的PST薄膜作为同质缓冲层的双层薄膜可减少薄膜的缺陷,从而有效降低介电损耗。The PbxSr1-x TiO3 （PST） bilayer thin films have been prepared by the radio frequency magnetron sputtering deposition method. The bilayer thin films use the low density thin films prepared at lower sputtering power as the buffer layer （homogeneity buffer layer）. XRD, SEM, impedance analyzer, ferroelectric analyzer were employed to analyze the phase structure, superficial appearance, dielectric loss and the ferroelectric property of the thin films. The result indicated that using the low density PST thin film as the homogeneity buffer layer could reduce the flaw in the bilayer thin films, thus effectively reduced the dielectric loss.

关 键 词：铁电薄膜 PbxSr1-xTiO3(PST) 磁控溅射 同质缓冲层 

分 类 号：TN304.055[电子电信—物理电子学]