1．46～1．66GHz 250W宽带硅微波脉冲大功率管  

1.46～ 1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors

作　　者：王因生[1] 李相光[1] 傅义珠[1] 王佃利[1] 丁晓明[1] 盛国兴[1] 康小虎[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《Journal of Semiconductors》2008年第5期965-969,共5页半导体学报（英文版）

摘　　要：报道了L波段高端中脉冲250W宽带硅微波脉冲大功率晶体管研制结果．该器件采用微波功率管环台面集电极结终端结构、非线性镇流电阻等新工艺技术，器件在1．46～1．66GHz频带内，脉宽200μs，占空比10％和40V工作电压下，全带内脉冲输出功率大于250W，功率增益大于7．0dB，效率大于45％．Using novel technologies such as the mesa junction termination structure with one guard ring and a nonlinear blasting resistor of microwave power transistors, a high L-band medium silicon pulse power transistor has been developed. Under 40V supply volt- age,internally matched devices cover the frequency for high L-band radar applications from 1.46～ 1.66GHz with a pulsed output power of 250W and 45% collector efficiency. The gain is more than 7. 0dB.

关 键 词：硅 微波 功率管 

分 类 号：TN32[电子电信—物理电子学]