射频PECVD法高压快速制备纳米晶硅薄膜  

Preparation of nanocrystalline silicon thin film at high pressure and fast rate by PECVD technique

作　　者：陈城钊[1] 邱胜桦[1] 刘翠青[1] 吴燕丹[1] 李平[1] 余楚迎[2] 林璇英[1] 

机构地区：[1]韩山师范学院物理与电子工程系,广东潮州521041 [2]汕头大学物理系,广东汕头515063

出　　处：《功能材料》2008年第5期848-850,共3页Journal of Functional Materials

基　　金：韩山师范学院青年科研基金资助项目(0503)

摘　　要：采用传统的射频等离子体增强化学气相沉积技术，在较高的工作气压（133～266Pa）下，以0．4nm／s速率制备出优质的氢化纳米晶硅薄膜。薄膜的晶化率约60％，平均晶粒尺寸约6．0nm，暗电导率为10^-3～10^-4／Ω·cm。红外吸收谱显示，薄膜中没有Si-O、Si-C、Si-N等杂质键，随晶化率的提高，Si-H键也逐渐消失。Hydrogenated nano-crystalline silicon thin films（nc-Si ： H） with deposition rate of 0.4nm/s were prepared by conventional plasma enhanced chemical vapor deposition（PECVD） technique under the high deposition pressure（133-266Pa）, which were characterized and analyzed by Raman spectra and IR spectra. The results showed the average grain size is about 6nm,dark-conductivity value is about 10^-4-10^-3/Ω·cm;the FTIR spectra showed that the bonds of Si-C,Si-O,or Si-N have not been found, the Si-H bond disappeares gradually with the crystallinity increasing.

关 键 词：纳米晶硅薄膜 RF-PECVD 生长速率 

分 类 号：TM914.4[电气工程—电力电子与电力传动]