InGaAs／InPAPD探测器光电特性检测  

Measurement of the Static Optoelectronic Characteristics of InGaAs/InP Avalanche Photodiode

作　　者：肖雪芳[1] 杨国华[1] 归强[1] 王国宏[1] 马晓宇[1] 陈朝[2] 陈良惠[1] 

机构地区：[1]中国科学院半导体研究所,北京海淀区100083 [2]厦门大学物理系,厦门361005

出　　处：《电子科技大学学报》2008年第3期460-463,共4页Journal of University of Electronic Science and Technology of China

摘　　要：建立了雪崩二极管的静态光电特性的自动测试系统。利用该系统对光敏面的直径为500μm的台面型InGaAs/InP雪崩光电二极管(APDs)进行测试。测试结果表明,该APD器件在90%击穿电压下的暗电流为151nA,在直径500μm的光敏面上其光响应均匀性良好。提出一种测量雪崩二极管倍增因子的方法,只需利用普通的测量电流-电压的测试仪器,就可以获得开始倍增时的光电流,从而得到APD的倍增因子。通过该方法得到的InGaAs/InPAPD器件最大倍增因子的典型值在10～100量级。A measurement system is set up which could measure static optoclcctronic characteristics of avalanche photodiodcs （APDs）. By using this system, the mesa-structure InP/InGaAs APDs is measured. The results show that the APDs have a relatively low dark currcnt （-150 nA at 90% of breakdown） and a uniform photorcsponsc profile of about 500 μm diameter. A method of getting APDs＇s multiplication gain is also proposed. Through getting the photocurrcnt at the point where multiplication is beginning, the multiplication gain can bc obtained by the simple current-voltage equipment. For InP/InGaAs APDs, the typical maximum multiplication gain measured by this method is about 10-100.

关 键 词：静态光电特性的自动测试系统 雪崩光电二极管 大面积APD 倍增因子 

分 类 号：TN312.7[电子电信—物理电子学]