基于介质电场增强理论的SOI横向高压器件与耐压模型  

SOI lateral high voltage devices and endure voltage models based on ENDIF principle

作　　者：罗小蓉[1] 李肇基[1] 

机构地区：[1]电子科技大学,四川成都610054

出　　处：《电子元件与材料》2008年第5期71-72,共2页Electronic Components And Materials

基　　金：国家自然科学基金重点资助项目(No.60436030)

摘　　要：SOI(Silicon On Insulator)高压集成电路(High Voltage Integrated Circuit,HVIC)因其具有高速、低功耗、抗辐照以及易于隔离等优点而得以广泛应用。作为SOIHVIC的核心器件,SOI横向高压器件较低的纵向击穿电压,限制了其在高压功率集成电路中的应用。为此,国内外众多学者提出了一系列新结构以提高SOI横向高压器件的纵向耐压。但迄今为止,SOI横向高压器件均采用SiO2作为埋层,且实用SOI器件击穿电压不超过600V;同时,就SOI横向器件的电场分布和耐压解析模型而言,现有的模型仅针对具有均匀厚度埋氧层和均匀厚度漂移区的SOI器件建立,而且没有一个统一的理论来指导SOI横向高压器件的纵向耐压设计。笔者围绕SOI横向高压器件的耐压问题,从耐压理论、器件结构和耐压解析模型几方面进行了研究。基于SOI器件介质层电场临界化的思想,提出介质电场增强ENDIF(Enhanced Dielectric LayerField)理论。在ENDIF理论指导下,提出三类SOI横向高压器件新结构,建立相应的耐压解析模型,并进行实验。(1)ENDIF理论对现有典型横向SOI高压器件的纵向耐压机理统一化ENDIF理论的思想是通过增强埋层电场而提高SOI横向器件的纵向耐压。ENDIF理论给出了增强埋层电场的三种途径:采用低εr(相对介电常数)介质埋层、薄SOI层和在漂移区/埋层界面引入电荷,并获得了一维近似下埋层电场和器件耐压的解析式。ENDIF理论可对现有典型SOI横向高压器件的纵向耐压机理统一化,它突破了传统SOI横向器件纵向耐压的理论极限,是优化设计SOI横向高压器件纵向耐压的普适理论。(2)基于ENDIF理论,提出以下三类SOI横向高压器件新结构,并进行理论和实验研究①首次提出低εr型介质埋层SOI高压器件新型结构及其耐压解析模型低εr型介质埋层SOI高压器件包括低εr介质埋层SOI高压器件、变εr介质埋层SOI高压器件和低εr介质埋层PSSOI HVIC（High Voltage Integrated Circuit） is widely applied due to the advantages such as high speed, low power dissipation, perfect irradiation hardness and superior isolation. SOl lateral high voltage devices are the key devices in SOl HVIC, of which the low vertical breakdown voltage limits the application in high voltage and power integrated circuit. A lot of novel structures have been proposed to enhance the vertical breakdown voltage of SOI lateral high voltage device. However, up to now, silicon dioxide is used as the buried layer and the breakdown voltage of the applied SOI devices is less than 600 V. At the same time, as for the analytical models for the electric field distribution and breakdown voltage of SOl lateral devices, the existing analytical models are presented only for SOl device with the constant thickness buried oxide layer and the constant thickness drift region. Furthermore, no unified principle can be used to design SOI lateral high voltage device to enhance the vertical breakdown voltage.

关 键 词：电子技术:ENDIF SOI 低εr介质 调制 击穿电压 解析模型 

分 类 号：TN301[电子电信—物理电子学]