沉积温度对制备ZnS薄膜的影响  

Influence of the Deposition Temperature on ZnS Thin Film

作　　者：纠智先[1] 李强[1] 

机构地区：[1]武汉工业学院数理科学系,湖北武汉430023

出　　处：《武汉工业学院学报》2008年第2期90-92,共3页Journal of Wuhan Polytechnic University

摘　　要：采用YAG固体激光器(1064nm)和XeCl(308nm)准分子激光器,利用射频辅助脉冲激光沉积技术,研究了在不同沉积温度下对制备ZnS薄膜的影响。利用X射线衍射(XRD)和扫描电子显微镜(SEM)对制备样品的结构、形貌特性进行了表征。结果表明:沉积温度和射频辅助密切相关,射频辅助更有利于低温下制膜。ZnS thin films were deposited by YAG laser （1064nm） and pulsed XeC1 （308nm） laser with radio frequency plasma, varying the deposition temperature. X-ray diffraction （XRD） and scanning electron microscope （SEM） were employed to characterize the structure and the morphology of samples. The results showed that the deposition temperature was tied up with radio frequency assistance which was more propitious to deposit thin film at low temperature.

关 键 词：脉冲激光沉积 ZNS薄膜 沉积温度 射频 

分 类 号：O484[理学—固体物理]