高性能S波段Si微波脉冲功率晶体管研制  

Research and Manufacture of High Performance S-Band Si Microwave Pulsed Power Transistor

作　　者：邓建国[1] 刘英坤[1] 张鸿亮[1] 潘茹[1] 马红梅[1] 李明月[1] 胡顺欣[1] 崔现锋[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2008年第6期477-479,共3页Semiconductor Technology

摘　　要：采用等平面自对准工艺技术研制成功的一种高增益、高效率和高可靠的S波段Si微波脉冲功率晶体管，该器件在fo为3.1-3.4 GHz、Vcc=32 V、PW=500μs、D=10%条件下共基极C类工作，宽带输出功率大于50 W，增益大于7.4 dB，效率大于36%；在Vcc=36 V时，宽带输出功率大于64 W，增益大于8.5 dB，效率大于36%，抗驻波失配能力达到3∶1不烧毁，表现出了良好的微波性能和高的可靠性。With equi-planar and self-aligned technology, a high gain, high collector efficiency and high stability S-band Si microwave pulsed power transistor was manufactured successfully. Under the conditions of 3.1 to 3.4 GHz, Vcc =32 V, 500 μs pulse width, 10% duty cycle, common base configuration and Class C operation, the performance of 50 W output power, 7.4 dB power gain and 36% collector efficiency was realized. The performance of 64 W output power, 8.5 dB power gain and 36% collector efficiency was reached at the Vcc = 36 V. 3：1 load mismatch tolerance （VSWR-T） of the device was reached. The good microwave performance and reliability of the device are represented.

关 键 词：硅 等平面自对准工艺 微波脉冲功率晶体管 

分 类 号：TN325.2[电子电信—物理电子学]