二极管p-n结杂质浓度分布模型改进  

An Improved Model for Analysis on Impurity Distribution in Diode p-n Junction

作　　者：李潮锐[1] 刘小伟[1] 

机构地区：[1]中山大学物理科学与工程技术学院,广东广州510275

出　　处：《中山大学学报（自然科学版）》2008年第3期37-40,46,共5页Acta Scientiarum Naturalium Universitatis Sunyatseni

基　　金：国家自然科学基金资助项目(10675175);高等学校博士学科点专项科研基金资助项目(20050558034)

摘　　要：简化的突变结或线性缓变结模型已能很好地近似二极管p-n结杂质浓度分布规律,但从精密的实验测量结果中发现传统模型存在局限性。基于随机选取常用产品的C-V实验数据,利用泊松方程并结合提出的改进模型,可以更准确地描述p-n结杂质浓度分布。虽然部分样品C-V关系可由指数1/2或1/3独立表示,但数据拟合分析显示采用指数n=1/2和n=1/3两模型分量共同描述更合理。模型改进可获得更准确的p-n结杂质浓度分布规律及物理参数。The impurity concentration distribution in diode p-n junction can be presented with the simplified models,named as abrupt junction and the linearly graded junction,but precise measurements show there existing limitation in these tradition models.Based on capacity-voltage experiment data from the most common commercial diodes,the impurity distribution in p-n junction will be described more accurately with use of improved model.Though C-V relation of some samples can be independently expressed with unique component of n=1/2 or n=1/3,others must be explained by the modified model with both of n=1/2 and 1/3 components.The new model provides the method to get more accurate physics parameters for diode p-n junction.

关 键 词：p—n结 杂质浓度 C—V法 泊松方程 

分 类 号：O474[理学—半导体物理]