高温退火对反应溅射制备的a-SiC:H薄膜结构的影响  

Effect of High-Temperature Annealing on the Structure of Reactive-Sputtering a-SiC:H Films

作　　者：王印月[1] 王辉耀[1] 王吉政 郭永平[1] 陈光华[1] 

机构地区：[1]兰州大学物理系,兰州730000

出　　处：《无机材料学报》1997年第3期351-355,共5页Journal of Inorganic Materials

基　　金：甘肃省自然科学基金!ZR-93-0179

摘　　要：通过红外透射谱、拉曼散射谱和X射线衍射谱的测量，研究了反应溅射制备的氢化非晶硅碳膜（SP-a-SiC：H）高温退人处理后的结构变化。发现在等时退火的情况下，退火温度对薄膜结构影响明显，H原子的逸出温度与键合有关，H从CHn中逸出要比从SiHn键中追出需要更高的温度，样品经800℃退火后。Using infrared transimissing, airman scattering, and X-ray diffraction spectroscopy, the authors investigated the effect of annealing temperature on the structure of amorphous hydrogenatedsilicon carbide (a-SiC:H) films prepared by the reactive sputtering method. It is found that annealing at temperature up to 800℃ results in evacuation of hydrogen atoms. Moreover, the annealingtemperature corresponding to the evacuation of H atom from CH. bonds is higher than thatof R evacuation from SiH. bonds. The annealing produces structural rearrangements, and theamorphous phase begins to transform into the microcrystalline phase at approxdriate 800℃.

关 键 词：高温退火 溅射 薄膜 碳化硅 氢化 半导体薄膜 

分 类 号：TN304.24[电子电信—物理电子学]