两个子带占据的In0·53Ga0·47As/In0·52Al0·48As量子阱中填充因子的变化规律  

Investigation of filling factor in In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As quantum wells with two occupied subbands

作　　者：商丽燕[1] 林铁[1] 周文政[1] 郭少令[1] 李东临[2] 高宏玲[2] 崔利杰[2] 曾一平[2] 褚君浩[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 [2]中国科学院半导体研究所,北京100083

出　　处：《物理学报》2008年第6期3818-3822,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60221502)资助的课题~~

摘　　要：研究了低温(1·5K)和强磁场(0—13T)条件下,InP基In0·53Ga0·47As/In0·52Al0·48As量子阱中电子占据两个子带时填充因子随磁场的变化规律.结果表明,在电子自旋分裂能远小于朗道能级展宽的情况下,如果两个子带分裂能是朗道分裂能的整数倍时,即ΔE21=kωc(其中k为整数),填充因子为偶数;当两个子带分裂能为朗道分裂能的半奇数倍时,即ΔE21=(2k+1)ωc/2,填充因子出现奇数.The magnetic field dependence of filling factors has been investigated on InP based In0.53Ga0.47As/In0.52Al0.48As quantum well samples with two occupied subbands by means of magnetotransport measurements at the temperature of 1.5K in a magnetic field range of 0 to 13T. Under the condiction that Laundau-level broadening is larger than the spin splitting of each subband, filling factors are even when the splitting energy of two subbands is an integer multiple of the cyclotron energy, i.e.ΔE21=kωc. If the splitting energy of two subbands is half of an odd interger multiple of the cyclotron erergy, i.e.ΔE21=（2k＋1）ωc/2, the filling factor is odd.

关 键 词：In0·53Ga0·47As/In0·52Al0·48As量子阱 填充因子 磁输运 

分 类 号：O471.1[理学—半导体物理] TM914.41[理学—物理]