高浓度臭氧在分子束外延法制备Bi系氧化物薄膜中的应用  

APPLICATION OF HIGH-CONCENTRATION OZONE IN THE PREPARATION OF Bi-BASED OXIDE THIN FILMS BY MOLECULAR BEAM EPITAXY

作　　者：张炳森[1] 于晓明[1] 孙霞光[1] 李茂林[1] 张彩碚[1] 祁阳[1] 

机构地区：[1]东北大学理学院材料物理与化学研究所,沈阳110004

出　　处：《金属学报》2008年第6期647-651,共5页Acta Metallurgica Sinica

基　　金：国家自然科学基金50572013

摘　　要：利用硅胶吸附解吸臭氧原理自制了臭氧浓缩装置，通过此装置制备的高浓度臭氧作为分子束外延制备Bi系氧化物薄膜的氧化源．在臭氧浓缩装置中，硅胶温度保持在-85℃左右，工作6h，可获得浓度（摩尔分数）高于95％的臭氧．当臭氧浓缩装置中压强保持在1．3×10^3Pa，该臭氧浓度可维持5h以上．X射线衍射结果表明，制备的高浓度臭氧在高真空条件下可将Cu氧化成CuO，并以此为氧化源利用分子束外延在MgO（100）衬底上制备了较高质量的Bi2Sr2CuO6＋x和Bi2Sr2CaCu2O8＋x薄膜．Using the principle of silica gel adsorbed-desorbed ozone, a homemade ozone concentrating apparatus was devised, and the high-concentration ozone was used as oxide source in molecular beam epitaxy （MBE） to prepare Bi based oxide thin fili：ns. The concentration （molar fraction） of ozone reached above 95% when the silica gel was kept at about -85 ℃ for 6 h, and can be kept over 5 h when the pressure in concentrating apparatus kept 1.3 × 10^3 Pa. X-ray diffraction （XRD） demonstrated that the high-concentration ozone can oxidize Cu to CuO in high vacuum. Furthermore, the oxide source is good enough to prepare high-quality Bi2Sr2CuO6＋x and Bi2Sr2CaCu2O8＋x thin films on the MgO （100） substrates by MBE.

关 键 词：臭氧 浓缩装置 Bi系氧化物薄膜 分子束外延 

分 类 号：TN405.984[电子电信—微电子学与固体电子学]