RTD／HEMT单片集成中RTD直流参数与材料结构的关系  

The Correlation between D.C.Parameters of RTD and It's Material Structures in the RTD/HEMT Monolithic Integration

作　　者：郭维廉[1] 牛萍娟[1] 苗长云[1] 于欣[1] 王伟[1] 商跃辉[2] 冯震[2] 田国平[2] 

机构地区：[1]天津工业大学信息与通信工程学院,天津300160 [2]中国电子科技集团公司十三所,石家庄050051

出　　处：《固体电子学研究与进展》2008年第2期167-171,共5页Research & Progress of SSE

基　　金：国家自然基金(批准号:NSFC60536030)资助;超高速专用集成电路重点实验室基金项目(批准号:514320104Jw1401)资助

摘　　要：为了研究器件参数与材料结构的关系,设计了三种不同的GaAs基RTD材料结构。通过完全相同的器件制造工艺,研制出三种RTD器件,并测量了它们的9个直流参数。对测量结果进行了对比和分析。最后针对RTD与HEMT集成时,如何处理RTD与HEMT间的电流匹配问题提出了建议。In order structures, three kinds same device processing, to study the correlation between device D.C. parameters and material of GaAs based RTD material structures have been designed. By all the three kinds of RTD have been fabricated from the three material structures, and the 9 D.C. parameters of them have been measured. The measured results have been compared and analyzed. Finally, the suggestion on how to treat the current matching between RTD and HEMT in the RTD/HEMT integration has been given.

关 键 词：共振隧穿二极管 材料结构 器件参数 

分 类 号：TN313.2[电子电信—物理电子学]