圆片直接键合界面表面能测试研究  

Measurement of Surface Energy for Wafer Direct Bonding

作　　者：廖广兰[1] 王美成[1] 史铁林[1] 史玉平[1] 汤自荣[2] 聂磊[1] 

机构地区：[1]华中科技大学数字制造装备与技术国家重点实验室,湖北武汉430074 [2]武汉光电国家实验室,湖北武汉430074

出　　处：《半导体光电》2008年第3期379-382,共4页Semiconductor Optoelectronics

基　　金：国家“973”计划资助项目(2003CB716207);国家自然科学基金资助项目(50405033,50775091)

摘　　要：基于裂纹传播扩散法,研究了键合圆片的表面能计算方法,推导出包括圆形、矩形、三角形等形状样品的平均表面能计算公式,并应用于硅片直接键合的表面能计算。应用实例表明,上述公式能方便地计算出键合圆片的平均表面能,实现对键合质量的检测和评估,进而可以指导和优化圆片直接键合工艺。Based on the crack-opening method, analytical expression of surface energy for bonded wafers was studied. The calculation formulas of average surface energy for round, rectangle and triangle samples were deduced, and then surface energy of silicon direct bonding was calculated. The theory and formula were applied in surface energy measurement for real silicon direct bonding. It follows the results that a convenient method for surface energy detection of wafer direct bonding is provided, and evaluation for wafer direct bonding will be realized, which can guide and optimize the wafer direct bonding process.

关 键 词：圆片键合 界面 裂纹传播扩散 表面能 测试 

分 类 号：TN432[电子电信—微电子学与固体电子学]