纳米ZnO生长及性质分析  

Growth and Properties of Nano ZnO

作　　者：刘少波[1] 顾书林[1] 刘伟[1] 张丹羽[2] 刘雪冬[1] 朱顺明[1] 丁维平[2] 张荣[1] 郑有炓[1] 

机构地区：[1]南京大学物理系,江苏南京210093 [2]南京大学化学化工学院,江苏南京210093

出　　处：《发光学报》2008年第3期527-531,共5页Chinese Journal of Luminescence

基　　金：南京大学科研基金资助项目(2006CL03)

摘　　要：利用低压金属有机化学气相沉积(LP-MOCVD)技术,在表面含有ZnO颗粒作为催化剂的Si(111)衬底上制备了ZnO纳米柱阵列。采用X射线衍射(XRD)、喇曼光谱(Raman)、扫描电子显微镜(SEM)、光致发光(PL)谱分析了样品的晶体结构质量、表面性质和光学性质。结果表明,生长出来的纳米ZnO具有较好的c轴择优取向性。发现氧分压对ZnO纳米柱的生长有重要影响:当氧分压较低时,生长基于VLS机制;当氧分压较高时,生长基于VS机制;通过对N2O流量的控制可实现对ZnO纳米材料的可控生长。By using low-pressure metal-organic chemical vapor phase deposition （LP-MOCVD） technology, ZnO nanorods were grown with ZnO particles as catalyst on Si （111） substrate＇s surface. X-ray diffraction （XRD）, Raman spectroscopy, scanning electron microscopy （SEM）, photoluminescence （PL） were used to characterize the crystalline quality, crystal structure, surface properties and optical properties of the ZnO nano-rod samples. The results show that ZnO nanorods have a preferential c-axis orientation. Oxygen partial＇pressure was found to have important influence on the growth of ZnO nanorods. When oxygen partial pressure is low, the growth of ZnO is based on VLS growth mechanism; when oxygen partial pressure is high, the growth of ZnO is based on VS growth mechanism; ZnO growth can be optimized by changing the flow rate of N2O. Currently the use of MOCVD and ZnO catalyst for the growth of nano-ZnO arrays are less reported. The paper has enriched ZnO nanomaterials synthesizing methods, and the growth control mechanism was discussed.

关 键 词：ZnO纳米柱 气-液-固/气-固生长机制 低压金属有机化学气相沉积法 

分 类 号：O482.31[理学—固体物理]