氩气压强对射频磁控溅射ZnO∶Al薄膜结构和性能的影响  

Effect of Ar Pressure on the Structure and Properties of ZnO∶Al Films Deposited by RF Magnetron Sputtering

作　　者：刘著光[1] 杨伟锋[1] 吕英[1] 黄火林[1] 吴正云[1] 

机构地区：[1]厦门大学物理系,福建省厦门市361005

出　　处：《光谱实验室》2008年第3期425-427,共3页Chinese Journal of Spectroscopy Laboratory

摘　　要：以ZnO∶Al2O3为靶材在石英玻璃衬底上射频磁控溅射制备多晶ZnO∶A l(AZO)薄膜,通过XRD、AFM以及H all效应、透射光谱等测试研究了RF溅射压强对薄膜结构、电学与光学性能的影响。分析表明:所制备的薄膜具有c轴择优取向,当压强为1.2Pa时薄膜的电阻率降至最低(2.7×10-3Ω·cm)。薄膜在可见光区平均透射率高于90%,光学带隙均大于本征ZnO的禁带宽度。Aluminum doped zinc oxide films were zinc oxide target doped with Al2O3 with different Ar deposited by RF magnetron sputtering using a pressure. The structural characteristics of the films were investigated by XRD and AFM while the electric and optical properties of the thin films were studied by the Hall measurement and optical spectroscopy ,respectively. All of the films deposited were c-axis preferred orientation perpendicular to＇the substrate. The lowest resistivity obtained in this study was for the film deposited at Ar pressure of 1.2Pa,and the average transmittance is larger than 90% in the visible range for all samples. The optical band gap of the films is in the range of 3. 53--3.66eV which is larger than the band gap of intrinsic ZnO.

关 键 词：RF磁控溅射 透明导电薄膜 AZO薄膜 

分 类 号：O657.39[理学—分析化学]