75mm 4°偏轴4H-SiC水平热壁式CVD外延生长  

Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD

作　　者：李哲洋[1] 董逊[1] 张岚[1] 陈刚[1] 柏松[1] 陈辰[1] 

机构地区：[1]南京电子器件研究所

出　　处：《Journal of Semiconductors》2008年第7期1347-1349,共3页半导体学报（英文版）

摘　　要：利用水平热壁式CVD外延生长技术,在75mm偏向〈1120〉方向4°的(0001)Si-面n型导电衬底上同质外延生长了4H-SiC薄膜.光学显微镜和原子力显微镜测试结果表明外延层表面存在三角形、胡萝卜状等典型的4°偏轴外延缺陷及普遍的台阶形貌.通过优化外延参数,片内浓度均匀性(σ/mean)和厚度均匀性分别达到4.37%和1.81%.4H-SiC films were grown on 75mm Si-face n-type substrates 4° off-oriented towards the （1120） direction using a horizontal hot-wall CVD system. Optical and atomic force microscopy results revealed the main defects observed were typical 4° off-large carrots,triangles,and a few down-falls. The most observable feature was the step bunching. By optimizing the process conditions, a low sigma/mean（σ/mean） value of 4.37% and 1.81% in doping concentration and thickness uniformity were obtained on the epitaxy films, respectively.

关 键 词：水平热壁式CVD 4H-SIC 同质外延 均匀性 

分 类 号：TN304.2[电子电信—物理电子学]