工艺参数对磁控溅射金属化薄膜性能的影响  

Effects of technological parameters in magnetron sputtering process on properties of metallized films

作　　者：马元远[1] 王德苗[1] 金浩[1] 郑建潮 

机构地区：[1]浙江大学信电系,浙江杭州310027 [2]嘉兴市能源利用监测中心,浙江嘉兴314000

出　　处：《真空》2008年第4期70-74,共5页Vacuum

基　　金：国家自然科学基金(No.50172042)

摘　　要：溅射金属化技术不仅环保,而且工艺过程简单,金属化质量高,将成为未来金属化工艺的主要发展方向。本文采用真空溅射技术在镍锌铁氧体表面制备了Cr(150nm)/Ni-Cu(460nm)/Ag(200nm)结构的金属化复合薄膜,从理论和实验上研究分析了溅射工艺参数对于薄膜性能的影响。研究表明:当溅射功率密度为20W·cm-2,靶片间距8cm,溅射气压0.5Pa时,结合性能和高温可焊接性能最好,可达6.19MPa和100%,成膜速率也比较理想。Magnetron sputtering process will be the basic trend to the metallization of thin films because of its environmentfriendly high quality and simple operation. Effects of the technological parameters on the properties of metallized thin film were therefore studied. The results revealed that the properties of Cr（ 150 nm）/Ni-Cu（460nm）/Ag（200 nm） multilayer film deposited via magnetron sprttering process will be the best when the sputtering power is 20W· cm^-2 with substrate-to-target distance 8cm under the air pressure 0.SPa. The bonding strength of the film is up to 6.19MPa with high-temperature weldability up to 100%.

关 键 词：铁氧体 磁控溅射 金属化 

分 类 号：TQ153.1[化学工程—电化学工业]