高温超高压烧结纳米SiC的研究  

Nano-SiC Ceramic Sintering at Ultra-high Pressure and High Temperature

作　　者：谢茂林[1] 罗德礼[1] 鲜晓斌[1] 冷邦义[1] 谢东华[1] 鲁伟员[2] 

机构地区：[1]中国工程物理研究院,绵阳621900 [2]四川艺精超硬材料有限公司,江油621700

出　　处：《无机材料学报》2008年第4期811-814,共4页Journal of Inorganic Materials

摘　　要：采用高温超高压(HT-HP)技术在4.5GPa/1250℃/20min工艺条件下制备了添加2wt% Al_2O_3助烧结剂的纳米SiC陶瓷.采用X射线粉末衍射(XRD)、X光电子能谱(XPS)、扫描电镜(SEM)、X射线能谱(EDX)、纳米压痕(Nano indenter)研究了烧结SiC陶瓷的物相组成、晶粒大小、化学成分、微观结构、纳米压痕力学性能等.结果表明:采用超高压烧结,可以在较低温度(1250±50℃)、较少烧结助剂用量下实现纳米SiC的致密烧结.烧结体未发生相转变,结构致密,无孔隙,晶粒尺寸为22nm,品格常数为4.355(?);显微硬度为33.7GPa,弹性模量为407GPa.High-density SiC ceramics doped with 2wt% Al2O3 additives were fabricated by ultra-high pressure and high temperature technique （4.5GPa,1250℃,20min）. The structures, grain size, lattice parameters, chemical component, morphology and mechanical property of the sintered SiC ceramics were characterized by X-ray diffraction （XRD）, X-ray photoelectron energy spectroscope （XPS）, scanning electron microscope （SEM）, energy dispersive X-ray spectroscope （EDX） and nano impress indenter. The results show that nano-SiC ceramic is fully densified by ultra-high pressure technique at relative low temperature （1250±50℃）. No phase transfer or holes is found in the sintered nano-SiC ceramic. The hardness and elastic modulus of the sintered SiC ceramic with grain size of 22nm and lattice parameters of 4.355A are 33.7GPa and 407GPa, respectively.

关 键 词：超高压 烧结 碳化硅 氧化铝 

分 类 号：TB383[一般工业技术—材料科学与工程]