直立平板电极反应室中硅粉粒的表面刻蚀  

Surface etching of silicon particulates between vertical planar electrodes

作　　者：李战春[1] 尹盛[2] 赵亮[2] 王敬义[2] 

机构地区：[1]华中科技大学网络与计算中心,湖北武汉430074 [2]华中科技大学电子科学技术系,湖北武汉430074

出　　处：《华中科技大学学报（自然科学版）》2008年第7期41-44,共4页Journal of Huazhong University of Science and Technology(Natural Science Edition)

基　　金：国家自然科学基金资助项目(10475029)

摘　　要：在直立平板电极鞘层内进行了硅粉表面刻蚀,使硅粉的纯度由99%提高到99.97%.提出了鞘区中离子和高能氩原子的平均能量和通量方程,建立了包括高能中性粒子贡献的刻蚀速率计算式.实验和计算结果表明总的刻蚀速率可达到2.04×10^15/（cm^2·s）以上.文中还给出了反应区内粉粒沉降时间的方程和粉粒的收集判据.在一般工艺条件下,硅粉在反应区内的沉降时间为5-10 s,这意味着纯化目标必须经约40次循环才能实现.The purity of Si was increased from 99 % to 99.97 % through surface etching of Si in the sheath between vertical planar electrodes.The equations of average energy and flux for ions and energetic neutrals in the sheath were given,and the etching rate equation,including contribution of the energetic neutrals,was established.The experiment and calculation results show that the etching rate could be increased up to 2.04×10^15/（cm^2·s）.The drop time equation and the collection criterion of the particulates in the reaction area were also given.Under normal technology conditions,the drop time is about 5～10 s,showing that 40 cycles of test must be done for the purity target.This study is a new exploration for the solar grade silicon purity and can develop further.

关 键 词：等离子体 粉粒表面刻蚀 沉降时间 刻蚀速率 

分 类 号：TN304[电子电信—物理电子学]