硅全耗尽背照式光电二极管列阵的研制  

Fully Depleted Back Illuminated Silicon Photodiode Array

作　　者：董金珠[1] 梁平治[1] 江美玲[1] 

机构地区：[1]中国科学院上海技术物理研究所

出　　处：《科学技术与工程》2008年第15期4326-4328,4334,共4页Science Technology and Engineering

摘　　要：在高电阻率的N型硅衬底上制作出全耗尽背照式的光电二极管。电阻率约为15000Ω.cm的硅衬底可以得到几百微米深的耗尽区,而通过在光电二极管的正背面施加一定的偏压就可以使其工作在全耗尽背照式的模式下。背面的浅结可以得到比较好的短波响应,而相对大的耗尽宽度可以在近红外处得到比较好的响应。测试结果表明器件在偏压为30V时,1μm处的峰值响应达到0.72A/W,量子效率达90%。Fully depleted back illuminated silicon photodiode array has been fabricated on high-resistivity, ntype silicon. The resistivity on the order of 15 000 Ω· cm, allows for depletion depths of several hundred microns. Fully-depleted, back-illuminated operation is achieved by the application of a bias voltage to photodiode. The shallow junction in back side allows for good short wavelength response, while the relatively large depleted thickness resuits in good near-infrared response. The measured results show that the peak responsivity is O. 72 A/W at 1 μm with quantum efficiency 90% under a bias voltage of 30 V.

关 键 词：全耗尽 背照式 光电二极管列阵 

分 类 号：TN364.2[电子电信—物理电子学]