衬底温度和硼掺杂对p型氢化微晶硅薄膜结构和电学特性的影响  

Substrate temperature and B-doping effects on microstructure and electronic properties of p-type hydrogenated microcrystalline silicon films

作　　者：杨仕娥[1] 文黎巍[1] 陈永生[1] 汪昌州[1] 谷锦华[1] 郜小勇[1] 卢景霄[1] 

机构地区：[1]郑州大学物理工程学院,材料物理教育部重点实验室,郑州450052

出　　处：《物理学报》2008年第8期5176-5181,共6页Acta Physica Sinica

基　　金：国家重点基础研究发展规划(批准号:2006CB202601);河南省自然科学基金(批准号:072300410080)资助的课题~~

摘　　要：以B2H6为掺杂剂,采用射频等离子体增强化学气相沉积技术在玻璃衬底上制备p型氢化微晶硅薄膜.研究了衬底温度和硼烷掺杂比对薄膜的微结构和暗电导率的影响.结果表明:在较高的衬底温度下很低的硼烷掺杂比即可导致薄膜非晶化;在实验范围内,随着衬底温度升高薄膜的晶化率单调下降,暗电导率先缓慢增加然后迅速下降,变化趋势与硼烷掺杂比的影响极为相似.最后着重讨论了p型氢化微晶硅薄膜的生长机理.P-type hydrogenated microcrystalline silicon thin films have been prepared by radio-frequency plasma-enhanced chemical vapor deposition with B_2H_6 as a doping gas.The effects of substrate temperature and the doping ratio on the microstructure and dark conductivity of the p-type hydrogenated microcrystalline silicon films have been investigated.The results show that the films deposited at higher substrate temperature are amorphous even if the doping ratio is very low.The crystalline volume fraction of films monotonically decreases and the dark conductivity initially increases slowly and then decreases rapidly with substrate temperature increasing,which is very similar to the effects of the doping ratio.Finally the growth mechanism of p-type hydrogenated microcrystalline silicon thin films has been discussed in particular.

关 键 词：p型氢化微晶硅薄膜 衬底温度 晶化率 电导率 

分 类 号：O484.1[理学—固体物理] TN304.055[理学—物理]