In0.53Ga0.47As/In0.52Al0.48As量子阱中的正磁电阻效应  

Positive magnetoresistance in In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As quantum well

作　　者：商丽燕[1] 林铁[1] 周文政[1] 李东临[2] 高宏玲[2] 曾一平[2] 郭少令[1] 俞国林[1] 褚君浩[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 [2]中国科学院半导体研究所,北京100083

出　　处：《物理学报》2008年第8期5232-5236,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60221502);国家重点基础研究发展规划(批准号:2007CB924901)资助的课题~~

摘　　要：在低温强磁场条件下,对In0.53Ga0.47As/In0.52Al0.48As量子阱中的二维电子气进行了磁输运测试.在低磁场范围内观察到正磁电阻效应,在高磁场下这一正磁电阻趋于饱和,分析表明这一现象与二维电子气中的电子占据两个子带有关.在考虑了两个子带之间的散射效应后,通过分析低磁场下的正磁电阻,得到了每个子带电子的迁移率,结果表明第二子带电子的迁移率高于第一子带电子的迁移率.进一步分析表明,这主要是由两个子带之间的散射引起的.Magnetotransport measurements have been carried out on In_0.53Ga0.47As/In0.52Al0.48As quantum wells in a temperature range between 1.5 and 77K.We have observed a large positive magnetoresistance in the low magnetic field range,but saturating in high magnetic fields.The magnetoresistance results from two occupied subbands in the two-dimensional electron gas.With the intersubband scattering considered,we obtained the subband mobility by analyzing the positive magnetoresistance.It is found that the second subband mobility is larger than that of the first due to the existence of the intersubband scattering.

关 键 词：二维电子气 正磁电阻 子带散射 

分 类 号：O471.1[理学—半导体物理]