短沟道SOI BJMOSFET的阈值电压  

Threshold voltage in short-channel SOI BJMOSFET

作　　者：曾云[1] 李晓磊[1] 张燕[1] 张国樑[1] 王太宏[1] 

机构地区：[1]湖南大学物理与微电子科学学院,长沙410082

出　　处：《功能材料与器件学报》2008年第4期831-834,共4页Journal of Functional Materials and Devices

基　　金：湖南省自然科学基金计划资助(No.05JJ30115)

摘　　要：提出了一种适用于短沟道SOI BJMOSFET阈值电压特性分析的电荷分享物理模型,详细讨论了短沟道SOI BJMOSFET背界面处于积累、反型以及全耗尽三种状态时的阈值电压,并利用Math-ematica软件进行数值模拟得到阈值电压的特性曲线。通过理论分析和计算机模拟,证明短沟道SOI BJMOSFET阈值电压的可控性很强,更适用于现代ULSI低压低功耗的要求。A charge sharing physical model for the threshold voltage analysis in short -channel SOI BJ- MOSFET has been proposed, and the different threshold voltage complexions when the back interface were at accumulated, reverse- style and full- depleted state have been discussed detailedly. Then, the software Mathematica has simulated the characteristic curve of its threshold voltage. From our theoretical analysis and computer simulation, it can be seen that the threshold voltage in short - channel SO1 BJ- MOSFET can be controlled easily and it will be more fit for the request of modern LUSI to low voltage and low consumption.

关 键 词：短沟道 绝缘衬底上硅 双极MOS场效应晶体管 阈值电压 

分 类 号：TN32[电子电信—物理电子学]