氮氧化铪薄膜在不同衬底上的场发射性能  

Electron field emission from HfN_xO_y films grown on different substrates

作　　者：王晓明[1] 谢二庆[1] 叶凡[1] 段辉高[1] 周明[1] 

机构地区：[1]兰州大学物理科学与技术学院,兰州730000

出　　处：《功能材料与器件学报》2008年第4期844-847,共4页Journal of Functional Materials and Devices

摘　　要：利用直流溅射法在Si、Zn、Ni三种不同衬底上沉积HfNxOy薄膜并测试了其场发射性能。扫描电子显微镜(SEM)显示HfNxOy薄膜表面由纳米颗粒组成,X射线衍射(XRD)说明薄膜中含有HfN和HfO2两种相。场发射测试结果显示,和金属衬底上的薄膜相比,Si衬底上的薄膜的开启电场小且发射电流密度大。文中对三种衬底上发射电流密度大小不同的原因进行了讨论。电流-时间的对应关系说明HfNxOy薄膜的场发射电流稳定。HfNxOy films were deposited on three different substrates （Si, Zn, Ni） using DC sputtering method and their field emission characteristics were investigated. SEM shows that the surface of the films is formed by nanoparticles. XRD spectra indicate that there are both HfN phase and HfO2 phase existing in the films. The field emission results show that compared with the flims grown on the metal substrates, the threshold field of the film grown on Si substrate is smaller and the emission current density is bigger. The differences of emission current densities of the three substrates are detailedly discussed. The relation of current versus time shows that the HfNxOy film has good current stability.

关 键 词：直流溅射 HfNxOy薄膜 场致电子发射 

分 类 号：TN304.2[电子电信—物理电子学]