集成电路互连铝通孔焦耳热效应的分析与模拟仿真  

Analysis and simulation of joule heat effect of interconnect via in integrate circuit

作　　者：江清明[1] 周继承[1] 杨春晖[2] 章晓文[2] 

机构地区：[1]中南大学物理科学与技术学院,长沙410083 [2]信息产业部电子五所,广州510610

出　　处：《功能材料与器件学报》2008年第4期848-852,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金资助项目(No.60371046)

摘　　要：对超大规模集成电路铝互连系统中的铝通孔电迁移进行了试验分析和模拟。以通孔开路为电迁移失效判据,求出了在加速条件下互连铝通孔的电迁移寿命;基于ANSYS模拟软件平台,对铝通孔电迁移热电耦合效应进行了模拟。仿真结果表明通孔最高温度比环境温度高出9.576K,与通孔自热效应理论模型算出的结果基本一致。考虑该温度修正后通孔电迁移寿命与实际值更接近。该工作对铝通孔电迁移的研究和寿命评价具有重要的实际意义。The electromigration test analysis and simulation of Al via in ULSI interconnect are investigated under the accelerated condition of different temperatures and constant current, the test sample fails when via circuit opens, and it gives the electromigration reliability lifetime of Al via for experiment data under the accelerated condition. Based on the simulation software platform ANSYS, simulation programs for Al via electromigration of thermoelectricity coupling effect are developed, results show that the top temperature is higher 9. 576K than environment, and accords the calculated result by via self - heat theory model. The calculated electromigration reliability lifetime based on the modified temperature under normal work condition approaches to factual value much more. This work has a significant result on the research and lifetime evaluation for Al via electromigration.

关 键 词：集成电路 通孔 金属互连线 温度分布模型 焦耳热 

分 类 号：TN406[电子电信—微电子学与固体电子学]