高可靠硅基MCM芯片凸点技术研究  

Study on High Reliability UBM for MCM-Si Technology

作　　者：叶冬[1] 刘欣[1] 刘建华[1] 罗驰[1] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2008年第4期489-492,共4页Microelectronics

摘　　要：介绍了采用芯片凸点和倒装焊技术(FCB)的MCM-Si工艺,重点研究了凸点下金属化(UBM)结构设计对电路可靠性的影响;通过再流焊和可靠性试验,以及凸点拉脱力测试,进行了可靠性评价。采用该工艺制作的电路已达到《混合集成电路通用规范》(GJB2438A-2002)可靠性等级的H级。MCM-Si technology based on flip-chip bonding （FCB） and under bump metallization （UBM） was described. Effect of UBM structure on the reliability of the circuit was investigated in particular. The reliability of FCB was evaluated through consecutive re-flow cycles, reliability experiments and lift-off force tests on the bump. The reliability of the circuit fabricated using this technology reaches Grade H specified in the General Specification for Hybrid Integrated Circuits in GJB2438A-2002.

关 键 词：多芯片组件 倒装焊 凸点下金属层 

分 类 号：TN453[电子电信—微电子学与固体电子学]