单面多层结构硅微压传感器的研制  

Study on Si Low Pressure Sensor with a Novel Single-sided Multilevel Structure

作　　者：任建军[1,2] 杨恒[1,2] 李昕欣 沈绍群[1,2] 鲍敏杭 

机构地区：[1]复旦大学电子工程系传感器研究室,上海200433 [2]传感技术国家重点实验室,上海200051

出　　处：《传感技术学报》1997年第4期1-6,共6页Chinese Journal of Sensors and Actuators

摘　　要：提出并利用“掩模-无掩模”腐蚀的方法形成了一种新型单面多层结构的硅微压传感器,该传感器针对用体微机械双面加工的硅压阻式压力传感器的不足,从结构上给予了改进,文中给出了理论分析和实验结果。研制的微压传感器在400Pa的微小量程下,输出可达34mV/5V,非线性仅为±0.6％F.S.Described in this paper is a novel single-sided multilevel structure sensor for very low pressure range by using 'masked-maskless' etching technology. The sensing structure has improved characteristics compared with the conventional structures micromachining processed from double sides of the wafer. The theoretical analyses are given and the sensor is successfully fabricated. The experimental results show that the output is 34 mV/5V FS for the pressure rande of 0. 4 kPa, with a nonlinearity of ± 0. 6 % FS.

关 键 词：传感器 微压传感器 压阻 硅 腐蚀 结构 

分 类 号：TP212.03[自动化与计算机技术—检测技术与自动化装置] TN304.12[自动化与计算机技术—控制科学与工程]