基于遗传算法的接近式紫外光刻中掩模补偿优化研究  

Research on Design Optimization of Photo Mask in UV-Lithography Based on Genetic Algorithm

作　　者：李晓光[1] 沈连婠[1] 李木军[1] 郑津津[1] 张四海[2] 

机构地区：[1]中国科学技术大学精密机械与精密仪器系,合肥230027 [2]中国科学技术大学计算机科学技术系,合肥230027

出　　处：《系统仿真学报》2008年第17期4601-4604,共4页Journal of System Simulation

基　　金：国家自然科学基金(60473133)

摘　　要：针对接近式紫外光刻图形转移中的曝光形状失真问题,基于补偿思想,应用遗传算法,在引起衍射的掩模特征处,通过调整其形状,实现了光刻胶表面的衍射光场调制。根据光刻曝光轮廓特点,设计评价策略,提出一种分段分类的思想,减小了问题的求解空间,快速优化了掩模设计图形。仿真结果表明优化补偿后的掩模图形降低了衍射造成的曝光图形的形状失真程度。该研究为如何提高接近式紫外光刻精度提供了一种新的思路。Graphics distortion caused by the diffraction in proximity lithography exposure process in UV -LIGA technology affects quality of MEMS structure. A compensation method which employed the Generic Algorithm （GA） was studied to optimize photo mask. The strategy of the method is to modulate the optical distribution by adjusting the pattern of the photo-mask. Based on contour of exposure simulation, an evaluation strategy was provided. To reduce the searching space, contour character was classified and limited. In the GA experiments, an optimum mask graphics was achieved. The simulation results show the graphics distortion ofphotoresist is reduced obviously.

关 键 词：接近式光刻 遗传算法 掩模优化 掩模 UV-LIGA 

分 类 号：TN305.7[电子电信—物理电子学]