自组装单分子膜的末端基团对化学气相沉积铜薄膜的影响  

Effects of Terminated Functional Groups of Self-assembled Monolayers on Chemical Vapor-deposited Copper Films

作　　者：刘铮铮[1] 王琦[1] 刘鑫[1] 包杰琼[1] 

机构地区：[1]浙江大学化学系,浙江杭州310027

出　　处：《材料科学与工程学报》2008年第4期545-549,共5页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(20176048;20576112)

摘　　要：利用化学气相沉积(CVD)的方法在自组装单分子膜(SAMs)修饰的SiO2表面沉积铜薄膜,并对得到的铜薄膜的性质进行表征与分析。通过比较研究发现:在沉积过程中,SAMs的末端基团作为铜沉积的反应位点,末端基团与铜之间的相互作用力越强,则铜在基材表面的沉积与附着能力越强,而且SAMs阻挡铜原子扩散进入硅内部的效果越好。而SAMs的生长取向也会对铜沉积时的晶型产生影响。Copper films were deposited on self-assembled monolayers （SAMs） modified SlOe substrates by chemical vapor deposition （CVD）, and then the deposited copper films were characterized and analyzed. It shows that the terminated functional groups of SAMs serve as the reaction sites for the copper deposition. The stronger interaction between the copper atoms and the functional groups of SAMs enhances the copper deposition and the interfacial adhesion of copper film onto the substrates, and also leads to a better effect on inhibiting the copper atoms diffusing into the silicon substrate as a diffusion barrier. The copper grown on SAMs-modified SiO2 substrates preferentially binds to a set of determined crystalline faces because of the assembling of the organic layer.

关 键 词：材料表面与界面 自组装单分子膜(SAMs) 末端官能团 铜薄膜 化学气相沉积 

分 类 号：TB43[一般工业技术]