双层侧壁保护的Si深槽刻蚀技术  

Technology with Double Side-Wall Protection Film for Silicon Deep Trench Etching

作　　者：邓建国[1] 刘英坤[1] 段雪[1] 苏丽娟[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2008年第8期480-483,共4页Micronanoelectronic Technology

摘　　要：提出了一种先进的ICP Si深槽刻蚀工艺。在"Bosch"工艺的基础上加以改进,以SF6/O2作为刻蚀气体,C4F8作为侧壁钝化气体,通过在刻蚀过程中引入少量的O2,使得在刻蚀Si深槽过程中侧壁形成由氧离子辐照产生的SiO2薄膜和CFx聚合物淀积产生的双层保护层,强烈保护Si槽侧壁不被刻蚀,保证了良好的各向异性刻蚀。同时,通过优化刻蚀和钝化的时间周期,进一步提高了刻蚀后Si槽的陡直度和平滑的侧壁效果。采用这种工艺技术可制作出满足台面晶体管、高性能梳状沟槽基区晶体管需要的无损伤、平滑陡直的Si槽侧壁形貌。An advanced silicon deep trench etching technology based on inductively-coupled plasma （ICP） was proposed. SF6/O2 and C4F8 served as reaction and sidewall passivation gas respectively, double side-wall protection films composed of polymer CFx and SiO2 can be formed during silicon deep trench etching by adding a little 02. It can prevent the side-wall from etching and ensure the etching nonisotropically. The smooth side-wall and steep profile can be obtained by varying factors and technology parameters. This technology can be used for manufacturing mesa transistors and high performance interdigitated trench base transistors.

关 键 词：感应耦合等离子体 “Bosch”工艺 硅 双层侧壁保护 各向异性刻蚀 

分 类 号：TN305.7[电子电信—物理电子学] TN304.12