同步辐射X射线光刻计算机模拟研究  

STUDY ON COMPUTER SIMULATION OF SYNCHROTRON RADIATION X-RAY LITHOGRAPHY

作　　者：谢常青[1] 叶甜春[1] 陈梦真[1] 

机构地区：[1]中国科学院微电子中心BSRF联合光刻站,北京100010

出　　处：《微细加工技术》1997年第3期14-19,共6页Microfabrication Technology

基　　金：军用微电子重点预研资助

摘　　要：利用BeamPropagationMethod（BPM）方法研究了深亚微米同步辐射X射线光刻中的掩模吸收体的光导波效应，并且利用瑞利-索末非理论对光刻胶表面的空间像光强分布进行了计算。研究结果表明基尔霍夫边界条件不宜用于计算0.25μm以下光刻分辨率的空间像光强分布。研究结果还表明北京同步辐射装置3BlA光刻束线的光刻分辨率可以达到0．1μm，而且这时金吸收体厚度为0．45μm就可以了，而不是通常认为的1．0μm。Beam propagation Method is used to study the mask absorber of lightwaveguide effect for deep sub-micron synchrotron radiation x-ray lithography,and the space imaae intensity distribution on the surface of the resist is also calculated using Rayleigh-Sommerfeld theory. It is shown that Kirchoff's boundary conditions cannot be used in the calculation of space image intensity distribution when the resolution is below 0. 25μm. It is also shown that the X-ray lithography resolution can reach 0. 1μm for Beijing Synchrotron Radiation Facility 3B1A beamline, and at this time the Au absorber thickness 0. 45μm is enough, Au absorber thickness 1. 0μm isn't needed as people usually think.

关 键 词：X射线光刻 分辨率 同步辐射 计算机模拟 光刻 

分 类 号：TN305.7[电子电信—物理电子学]