高温薄膜SOIMOS器件硅膜厚度的设计考虑  

Design Consideration of the Thickness of Silicon Film in High TemperatureThin Film SOI MOS Devices

作　　者：冯耀兰[1] 

机构地区：[1]东南大学微电子中心

出　　处：《电子器件》1997年第4期21-24,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金

摘　　要：根据薄膜ＳＯＩＭＯＳ器件的特点和高温应用的特殊考虑，采用计算机模拟技术，得出最大耗尽层宽度ｘｄｍａｘ和衬底掺杂浓度ＮＢ及温度Ｔ的关系曲线。研究结果表明，在常温下ｘｄｍａｘ随ＮＢ的增大而减小，当ＮＢ一定时，ｘｄｍａｘ随温度的升高而减小。因此，为满足薄膜器件的硅膜厚度ｄＳｉ小于ｘｄｍａｘ的条件及高温应用的特殊要求。The relationship between the maximum width of depletion layer　xdmax　in high temperature thin film SOI MOS devices and doping concentration as well as temperature has been presented by computer simulation. The characteristic of thin film SOI MOS device and speciall consideration of high temperature application have been taken into account. Results of research show that xdmax will reduce as NB　or T　increases when another parameters is fixed. To satisfy the demands that dSi　should be smaller than xdmax　and thin film devices operate well at high temperature, the influences of NB and T on design of dSi　must be considered for high temperature thin film SOI MOS devices.

关 键 词：高温薄膜 SOI MOS 硅膜 薄膜电路 

分 类 号：TN451[电子电信—微电子学与固体电子学] TN386.1