GaAs基AlGaInP LED的研究和进展  

Study and Status of AlGaInP LED Based on GaAs Substrate

作　　者：战瑛[1] 牛萍娟[1] 李晓云[1] 王小丽[1] 彭晓磊[1] 

机构地区：[1]天津工业大学信息与通信工程学院,天津300160

出　　处：《半导体技术》2008年第8期654-657,669,共5页Semiconductor Technology

基　　金：天津市科技创新专项资金项目(06FZZDGX01800)

摘　　要：探讨了GaAs基AlGaInP LED的最新研究与进展,介绍了AlGaInP红光LED外延材料的能带结构和基本的外延层结构以及限制外量子效率的问题,探讨了几种高效率的LED器件结构设计。着重介绍了目前一些外量子效率比较高的LED器件的制作方法以及一些提高外量子效率的AlGaInP LED器件结构,最后探讨了AlGaInP LED在作为固体光源发展过程中仍然需要面对的挑战。The recent study and progress of AlGaInP light-emitting diodes based on GaAs substrate is discussed. Some basic material energy bandgap, typical layer structure and the general problem of light extraction, several approaches of high efficiency devices are intrduced. In particular, various light extraction schemes which are important for achieving the highest possible light output efficiencies are reviewed. Finally, key challenges remaining in AIGaInP LED for solid-state lighting are elucidated and discussed.

关 键 词：ALGAINP 发光二极管 外量子效率 

分 类 号：TN364.2[电子电信—物理电子学]