高质量GaN材料的GSMBE生长  

High Quality GaN Grown by GSMBE

作　　者：王晓亮[1] 孙殿照[1] 孔梅影[1] 张剑平[1] 付荣辉 朱世荣[1] 曾一平[1] 李晋闽[1] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所材料科学中心,北京100083

出　　处：《Journal of Semiconductors》1997年第12期935-938,共4页半导体学报（英文版）

基　　金：国家"九五"重点科技攻关计划及博士后科学基金

摘　　要：在国内首次用NH3作氮源的GSMBE方法在α－Al2O3衬底上成功地生长出了高质量的GaN单晶外延膜．GaN外延膜的（0002）X射线双晶衍射峰回摆曲线的半高宽最窄为8’；背景电子浓度最低为2．7×1018cm－3，霍尔迁移率最好为91cm2／（V·s）；室温光致发光谱上只观察到一个强而锐的带边发光峰，谱峰位于363nm处，室温谱峰半高宽最窄为8nm（75meV）．High quality gallium nitride single crystalline epitaxial layer has been achieved on (0001) sapphire substrate by GSMBE using amonia as nitrogen source for the first time in China. The narrowest full width at half maximum(FWHM) of the (0002) double crystal X-ray diffraction rocking curve is 8 arcmin.. The undoped electron concentration as low as 2. 5 × 1018cm-3 can be obtained. The highest Hall mobility achieved is about 91cm2/(V. s). On room temperature photoluminescence spectra, an intense and narrow band edge emission peaked at 363nm can be observed with a narrowest FWHM of 8nm (75meV); the yellow emission in the energy range of 500 ～ 600 nm is not noticeable,which signifies the high quality of the film.

关 键 词：氮化镓 GSMBE 外延生长 

分 类 号：TN304.24[电子电信—物理电子学] TN304.054