500V耗尽型NLDMOS器件研究  

Study of 500 V Depletion-Mode NLDMOS

作　　者：李维聪[1] 李海松[1] 孙伟锋[1] 

机构地区：[1]东南大学国家专用集成电路系统工程技术研究中心,南京210096

出　　处：《半导体技术》2008年第9期772-775,共4页Semiconductor Technology

摘　　要：基于一款LED驱动芯片中耗尽型高压NLDMOS器件的参数要求,提出一种耗尽型高压NLDMOS的器件结构和参数设计优化方法。分析了沟道注入工艺对器件阈值电压和表面电场分布的影响,综合利用RESURF技术和线性漂移区技术,改善耗尽型NLDMOS的表面电场分布,从而提高了器件的击穿电压。在漂移区长度L≤50μm下,器件击穿电压达到600 V以上,可以应用于LED驱动芯片整流器电路等各种高压功率集成电路。Analyzing the parameters of the depletion-mode HV-NLDMOS used in a LED driver IC, the structure of DM-NLDMOS and optimal design method of its parameters were proposed. The impact of implant process in channel on Vτ and surface electrical field distribution was analyzed. The distribution of surface electrical field was optimized by using RESURF and linear doping profile. Finally, a 600 V DM-NLDMOS is achieved under drift region length L≤ 50μm. The proposed DM-NLDMOS can be used in the regulator circuit of LED driver IC and other HV power IC.

关 键 词：耗尽型 高压LDMOS 线性漂移区 

分 类 号：TN386.1[电子电信—物理电子学]