具有温度稳定性的SiC CMOS运算放大器的设计  

Design of SiC CMOS Op-Amp with High-Temperature Stability

作　　者：刘莉[1] 杨银堂[1] 柴常春[1] 

机构地区：[1]西安电子科技大学,宽带隙半导体材料与器件教育部重点实验室,西安710071

出　　处：《微电子学》2008年第5期697-702,共6页Microelectronics

基　　金：教育部重点科技项目资助(02074);国家部委预研项目资助(41308060105)

摘　　要：设计了具有温度稳定性的SiC CMOS运算放大器。根据所希望的IDSat(ZTC)和任一节点泄漏电流为零的原则设计偏置电路;输入采用差分输入,同时按照泄漏电流匹配的原则,合理选取Dcomp的面积。Si MOS器件电源电压为5V,采用TSMC 0.25μm工艺制作。当温度从300K变化到600K时,SiC运放的增益和相位裕度的变化率分别为2.5%和3.3%,而Si电路的增益从300K的64dB降到-80dB,失去电路的稳定性。但是,由于Si CMOS器件沟道迁移率低,导致器件的跨导低于相同尺寸下的Si器件,所以其开环增益也小于相同结构和尺寸的Si运算放大器。A SiC CMOS op-amp with high-temperature stability was designed, and its Si counterpart was designed with TSMC＇s 0. 25μm technology. Bias circuit was designed based on the desired IDSat, （ZTC）and zero leakage current at each node, and the Damp area was chosen based on leakage current matching. Variation of DC gain and phase margin of SiC CMOS op-amp was 2.5% and 3.30%, respectively. In contrast, the Si op-amp lost its tempera- ture stability when its gain dropped from 64 dB to -80 dB. But SiC devices were suffering from some imperfect material properties, such as tow channel mobility, which would result in low transconductance from the viewpoint of circuit design.

关 键 词：SIC CMOS 运算放大器 零温度系数 

分 类 号：TN402[电子电信—微电子学与固体电子学] TN722.77