立方氮化硼薄膜的光学带隙  

Optical band gap of cubic boron nitride thin films deposited by sputtering

作　　者：邓金祥[1] 汪旭洋[1] 姚倩[1] 周涛[1] 张晓康[2] 

机构地区：[1]北京工业大学应用数理学院,北京100022 [2]兰州大学物理学院,兰州730000

出　　处：《物理学报》2008年第10期6631-6635,共5页Acta Physica Sinica

基　　金：北京市自然科学基金(批准号:4072007);国家自然科学基金(批准号:60376007);北京市属市管高等学校人才强教计划资助的课题~~

摘　　要：用射频溅射法在p型Si(100)衬底上沉积立方氮化硼(c-BN)薄膜,薄膜的成分由傅里叶变换红外谱标识,用紫外-可见分光光度计测量了c-BN薄膜的反射光谱,利用K-K(Kramers-Kroning)关系从反射谱计算出c-BN薄膜的光吸收系数,进而确定c-BN薄膜的光学带隙.对于立方相含量为55.4%的c-BN薄膜,光学带隙为5.38 eV.Cubic boron nitride thin films were deposited on silicon （100） substrates by sputtering. The films were characterized by Fourier transform infrared （FTIR） spectroscopy. The reflectance R（λ） of the films was obtained as a function of incident photon wavelengths and the thickness of the films was measured by Alpha-step. Using Kramers-Kronig transform and the reflectance spectrum R（λ）, we calculated the absorption coefficient. The optical band gap was found to be 5.38 eV for the films containing 55.4% of cubic phase.

关 键 词：立方氮化硼薄膜 光学带隙 K-K关系 

分 类 号：O484.41[理学—固体物理]