化学抛光和退火对钛酸锶基片表面改性研究  

Study on the Influence of CMP and Anneal to SrTiO_3 Surface

作　　者：陈光珠[1] 杭寅[1] 汪隽[2] 何晓明[1] 张连翰[1] 李志鸿[1] 华如江[1] 何明珠[1] 

机构地区：[1]中国科学院上海光学与精密机械研究所,上海201800 [2]成都理工大学化学化工学院,成都610059

出　　处：《人工晶体学报》2008年第5期1107-1112,共6页Journal of Synthetic Crystals

摘　　要：本文运用原子力显微镜检测传统机械抛光和化学机械抛光以及退火前后的钛酸锶(STO)衬底表面,研究了化学机械抛光和退火对钛酸锶(STO)基片表面形貌的影响,结果表明化学抛光可以使表面粗糙度达到0.214 nm,明显优于机械抛光。对比测量退火前后钛酸锶(STO)基片的双晶摇摆曲线,表明退火可以明显改善晶体质量,有利于实现超光滑STO基片的加工。Atomic force microscopy （AFM） was applied to study the surface morphology of SrTiO3 substrates which were polished by traditional mechanical and chemical mechanical method respectively. The influence of anneal was also studied. Results show that the RMS of CMP STO substrates can be 0.214 nm. Compared the rocking curve of the unannealed STO substrates with the annealed ones, it indicates that anneal can improve the crystal quality.

关 键 词：钛酸锶 超光滑表面 化学机械抛光 退火 

分 类 号：O786[理学—晶体学]