无掩模光刻技术研究  

Study on Maskless Lithography Technology

作　　者：蒋文波[1,2] 胡松[1] 

机构地区：[1]中国科学院光电技术研究所,成都610209 [2]中国科学院研究生院,北京100039

出　　处：《微细加工技术》2008年第4期1-3,64,共4页Microfabrication Technology

基　　金：国家自然科基金资助项目(60706005;60776029);863计划资助项目(2006AA03Z355)

摘　　要：介绍了无掩模光刻技术的现状和存在的问题,并对几种常见的无掩模光刻技术进行了详细的对比分析。研究表明,扫描电子束光刻具有极高的分辨率,但是生产效率较低;波带片阵列光刻技术已经在理论和实验上取得了广泛的成果,在保持无掩模光刻技术高分辨力的同时,对电子束的低效率将是一种补充,是一种很有潜力的用于制作掩模版的光刻技术。As a promising technology, it has significant advantages for low-volume manufacturing, high resolution required, research, design verification and the exploration of novel applications of lithography. The present and the problem of the maskless lithography were introduced. By comparing several familiar maskless lithography technologies, some results were acquired. Scanning electron-beam lithography （SEBL） systems have high resolution but low-volume manufacturing. Zone-plate-array lithography （ZPAL） has produced extensive theoretic and experimental results,it will be used in making mask tool for its＇ high resolution and as a complement to SEBL.

关 键 词：无掩模光刻 扫描电子束光刻 波带片阵列光刻 掩模版 

分 类 号：TN305.7[电子电信—物理电子学]