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作 者:严伟[1] 胡松[1] 唐小萍[1] 赵立新[1] 杨勇[1,2] 蒋文波[1,2] 周绍林[1,2] 陈旺富[1,2]
机构地区:[1]中国科学院光电技术研究所,成都610209 [2]中国科学院研究生院,北京100039
出 处:《电子工业专用设备》2008年第10期14-19,共6页Equipment for Electronic Products Manufacturing
基 金:西部之光人才培养计划支持(编号:A07K005)
摘 要:随着器件特征尺寸的继续缩小,所需掩模的成本呈直线上升态势,为降低掩模成本,无掩模光刻技术成为人们研究的热点。介绍了一种基于DMD的步进式无掩模数字曝光方法,并对用于实现该曝光方法装置的设计方案和具体实现进行了论述与分析。最后利用厚的光刻胶进行曝光工艺实验,实验结果表明,本装置可以实现亚微米级线条的刻蚀,较高的侧壁陡度,线条拼接结果良好,可以实现大面积数字式曝光。With the characteristic dimension become more and more miniature, the cost of mask fabrication greatly increased. In order to reduce the cost of mask fabrication, the technique of maskless optical lithography becomes the center of micro-electronic industry. A method of maskless optical digital lithography based on DMD, which can realize precise exposure with step, was introduced in this paper; and the principle of design and implementation of the apparatus applied the method were analysed in detail. Finally, exposure experiments using thick photoresist were carried out; the results showed the linewidth of micrometer, steep sidewall, good conjunction of lines and digital exposure of large area can be realized by the designed apparatus.
分 类 号:TN216[电子电信—物理电子学]
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