Si纳米线表面Ni薄膜生长工艺  

Growth of Nickel Films on the Surface of Silicon Nanowire

作　　者：陈扬文[1] 江素华[1] 邵丙铣[1] 戎瑞芬[1] 汪荣昌[1] 顾志光[1] 王家楫[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《微纳电子技术》2008年第10期606-610,共5页Micronanoelectronic Technology

摘　　要：研究了Si纳米线表面Ni薄膜生长工艺。采用热蒸发法以SiO为起始原料制备自组生长的Si纳米线,再以5%(体积分数)HF剔除Si纳米线表面硅氧化合物,采用氩离子磁控溅射的方法在Si纳米线表面溅射一定厚度的无定形Ni颗粒,此后对镀Ni的Si纳米线进行完整晶体结构的退火处理。应用高分辨透射电镜(HRTEM)等结构表征工具分析了Si纳米线表面Ni薄膜的形成过程,HRTEM结果表明,在350℃左右退火得到的Si纳米线表面能形成连续的、结构完整的Ni薄膜;退火温度低于300℃时,表面溅射的Ni结晶效果较差;退火温度在800℃时,表面Ni薄膜发生团聚,形成了分立的纳米颗粒。The process of nickel film growth on the silicon nanowires was studied. The selfassembled Si nanowires were synthesized by thermal decomposition of silicon monoxide and their outer silica shells were etched by 5 % HF solution. Amorphous nickel nanoparticles were deposited on the surface of etched Si nanowires using argon ion sputtering. After that, the nickel plated Si nanowires were annealed at different temperatures to perfect their structures and the high-resolution transmission electron microscopy （HRTEM） was used to analyze the formation of the nickel films. The results indicate that the continual nickel films with good crystalline structures are formed when the annealing temperature is at 350 ℃ and the nickel films are immaturity when the annealing temperature is below 300 ℃. The nickel films agglomerate to some large discontinuous nickel particles when the annealing temperature is at 800 ℃.

关 键 词：SI纳米线 磁控溅射 镀Ni 退火 薄膜 

分 类 号：TB383[一般工业技术—材料科学与工程] TN305.3[电子电信—物理电子学]