Zn_(1-x)Cr_xO稀磁半导体薄膜的制备及磁性研究  

Studies of preparation and magnetism in Cr-doped ZnO diluted magnetic semiconductors

作　　者：陈霞[1] 陈希明[1] 李杰[1] 张俊萍[1] 

机构地区：[1]天津理工大学电子信息与通信工程学院

出　　处：《天津理工大学学报》2008年第3期21-22,共2页Journal of Tianjin University of Technology

基　　金：天津市自然科学基金重点项目(06YFJZJC00100)

摘　　要：采用磁控交替溅射方法和真空退火处理制备了Zn1-xCrxO薄膜,利用全自动X射线衍射仪和物理性质测量仪对样品的结构、晶粒尺寸及磁性等进行了测量和标度,得到了具有室温磁性的掺Cr的氧化锌基稀磁半导体.In this paper Cr-doped zinc oxide （ZnO） thin films were prepared by magnetron sputtering and annealed in vacuum. The samples＇ structure, grain size and magnetism were further measured by X-ray diffraction and PPMS . The measure shows that the ZnO-based diluted magnetic semiconductors doped with Cr have room-temperature ferromagnetism.

关 键 词：稀磁半导体 氧化锌 掺杂 磁控溅射法 

分 类 号：TN304.055[电子电信—物理电子学]