硅深刻蚀中掩蔽层材料的研究  

Study on the Selectivity of Masking Materials in Silicon Deep Etching

作　　者：蔡长龙[1] 马睿[1] 刘卫国[1] 

机构地区：[1]西安工业大学光电微细统研究所,西安710032

出　　处：《西安工业大学学报》2008年第4期307-312,共6页Journal of Xi’an Technological University

基　　金：西安应用材料创新基金(XA-AM-200618)

摘　　要：掩蔽层材料选择比低是硅高深宽比微结构实现的限制之一.为了获得高质量的掩蔽层材料,利用感应耦合等离子体(Inductively Coupled Plasma,ICP)刻蚀方法,选择SiO2,MgO,Al作为掩蔽层材料,通过研究刻蚀过程中射频功率及气体流量对SiO2,MgO,Al及Si刻蚀速率变化的影响,获得了SF6等离子体对Si与SiO2,Si与MgO,Si与Al的选择比.结果表明:MgO薄膜作为掩蔽层、射频功率为800 W,气体流量为50 sccm或80 sccm是深刻蚀中适宜的工艺参数.The low selectivity of masking materials is one of the restrictions on fabrication process of high aspect ratio of micro-structures. By using SiO2,MgO and A1 as masking materials, the high quality masking can be obtained by the process of inductively coupled plasma（ICP） etching. In this paper, the etching rate of Si,SiO2, MgO and A1 in the SF6 plasma are obtained by studying the influence of radio frequency power and the gas flow. The selectivity of Si for SiO2, Si for MgO and Si for A1 in the different radio frequency power and gas flow is acquired. The result indicates that the optimum masking material is MgO, radio frequency power is 800 W and gas flow is 50 scem or 80 sccm.

关 键 词：ICP刻蚀 掩蔽层材料 刻蚀速率 选择比 

分 类 号：TN405[电子电信—微电子学与固体电子学]