真空高阻区熔Si单晶中的微缺陷及其少子寿命  

Micro-Defects and Minority Carrier Lifetime of FZ-Si Single Crystal with High Resistivity Grown in Vacuum

作　　者：闫萍[1] 张殿朝[1] 庞丙远[1] 索开南[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2008年第11期1003-1006,共4页Semiconductor Technology

摘　　要：通过在Ar气氛及真空环境中进行的高阻区熔Si单晶生长实验,分析了晶体直径、晶体生长环境及晶体生长速率对晶体中微缺陷及少子寿命的影响及产生这种影响的原因。单晶生长实验表明,与在Ar气氛下的单晶生长相比,在真空环境下采用较低的晶体生长速率即可生长出无漩涡缺陷的单晶,而当晶体生长速度较高时,尽管可以消除漩涡,但单晶的少子寿命却有明显的下降。By float zone growth experiments of Si single crystals in vacuum and Ar condition respectively, the influence of the crystal diameter, the crystal growth ambience and the crystal growth speed to the crystal defects and the minority cartier lifetime were analyzed. Comparing with Ar ambience, when growing crystal in vacuum it needs lower growth speed to get free swirl-defects crystal. And when the growth speed is much higher than needed to eliminate the swirl-defects, the minority carrier lifetime of the crystal will be reduced markedly.

关 键 词：高阻硅单晶 微缺陷 少子寿命 

分 类 号：TN305.1[电子电信—物理电子学]