液相外延生长GaAs微探尖刻蚀剥离技术研究  

Etching and peeling technique of GaAs microtips grown by liquid-phase epitaxy

作　　者：梁秀萍[1] 冯秋菊[2] 张贺秋[1] 田怡春[1] 张红治[1] 孙晓娟[1] 胡礼中[1] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室,辽宁大连116024 [2]辽宁师范大学物理与电子技术学院,辽宁大连116029

出　　处：《光电子．激光》2008年第11期1490-1492,共3页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60777009)

摘　　要：介绍一种用于扫描近场光学显微术(NSOM)传感头的GaAs微探尖的生长剥离技术。通过SiO2掩膜窗口,利用一次选择液相外延制备周期性阵列的GaAs微探尖。在GaAs衬底与GaAs微探尖之间引入AlGaAs层,并对窗口大小的AlGaAs层进行选择腐蚀,将单个GaAs微探尖从GaAs衬底上剥离下来。扫描电子显微镜显示的结果表明,此微探尖具有金字塔结构、表面光滑且转移过程无损伤。这种技术制备的GaAs微探尖的形貌与质量主要由晶体的结构决定,具有可重复、表面光滑、适合批量生产的优点。A growing and etching technique for GaAs microtips is introduced,which could be used for scanning electron microscopy（SEM） images Liquid-phase epitaxy（LPE） is used to fabricate GaAs periodic microtip array through SiO2 mask windows. AlGaAs layer is grown between GaAs substrate and GaAs microtips, and then the AlGaAs layer is selectively etched, which leads to the GaAs microtips peeling off from the suhstrate. SEM images show that the transferred GaAs microtips have the micro-pyramid structure with sharp tops and smooth surfaces,and they are not damaged during the transfer process. The shapes of the GaAs microtips fabricated by this technique are mainly decided by the crystal structure,and they have the superiority of repetition,smooth surface and suitability for mass production.

关 键 词：液相外延 微探尖 湿法刻蚀 扫描近场光学显微术 

分 类 号：TN305[电子电信—物理电子学]