应变硅MOSFET沟道应变的有限元研究  

Finite-element study of strain field in the channel of strained-Si MOSFET

作　　者：刘海华[1] 段晓峰[1] 徐秋霞[2] 

机构地区：[1]北京电子显微镜实验室,中国科学院物理研究所,北京100190 [2]中国科学院微电子研究所,北京100029

出　　处：《电子显微学报》2008年第5期364-369,共6页Journal of Chinese Electron Microscopy Society

基　　金：国家科技部项目资助(No.2007CB936301,2001CB610502和G2000036504)

摘　　要：本文报道了利用有限元计算和动力学大角度会聚束电子衍射模拟的方法研究了应变硅场效应晶体管沟道中的应变分布。沟道压应变是利用预非晶化源漏区锗离子注入应变诱导工艺技术引入的。有限元计算结果显示,器件的源漏区很低的锗注入剂量在沟道区的顶层造成了很大的压应变,而且在沟道和硅衬底中间形成一个应变过渡层。大角度会聚束电子衍射的动力学模拟结果与有限元计算结果符合很好。The strain field in the channel of a p-type metal-oxide-semiconductor field effect transistor （PMOSFET） fabricated by integrating Ge pre-amorphization implantation for source/drain regions is evaluated using a finite-element method combined with large angle convergent-beam electron diffraction （LACBED） . The finite-element calculation shows that there is a very large compressive strain in the top layer of the channel region caused by a low dose of Ge ion implantation in the source and drain extension regions. Moreover, a transition region is formed in the bottom of the channel region and the top of the Si substrate. These calculation results are in good agreement with the LACBED experiments.

关 键 词：应变硅 场效应晶体管 有限元方法 大角度会聚束电子衍射 

分 类 号：O613.7[理学—无机化学] TN386.1[理学—化学]