n型4H-SiC湿氧二次氧化退火工艺与SiO_2/SiC界面研究  

Investigation of n-type 4H-SiC wet re-oxidation annealing process and SiO_2/SiC interface

作　　者：马继开[1] 王德君[1] 朱巧智[1] 赵亮[1] 王海波[1] 

机构地区：[1]大连理工大学电子与信息工程学院,大连116024

出　　处：《北京科技大学学报》2008年第11期1282-1285,共4页Journal of University of Science and Technology Beijing

基　　金：科技部重大基础研究前期研究专项资助项目(No.2005CCA00100);辽宁省自然科学基金资助项目(No.20072192);教育部新世纪优秀人才支持计划资助项目(No.NCET-06-0278);教育部留学回国人员科研启动基金资助项目(No.20071108)

摘　　要：在传统氧化工艺的基础上,结合低温湿氧二次氧化退火制作4H-SiCMOS电容.通过I-V测试,结合Fowler-Nordheim(F-N)隧道电流模型分析了氧化膜质量;使用Terman法计算了SiO2/SiC界面态密度;通过XPS测试对采取不同工艺的器件界面结构进行了对比.在该工艺下获得的氧化膜击穿场强为10MV.cm-1,SiC/SiO2势垒高度2.46eV,同时SiO2/SiC的界面性能明显改善,界面态密度达到了1011eV-1.cm-2量级,已经达到了制作器件的可靠性要求.Based on the traditional oxidation process, 4H-SiC MOS capacitors were fabricated by wet re-oxidation annealing （wet-ROA）. The oxide film quality was analyzed by I-V characteristics testing and the Flower-Nordheim （F-N） tunneling current model. The SiO2/SiC interface trap density was calculated by the Terman method. The structures of SiO2/SiC interfaces, which were obtained by different processes, were analyzed by XPS. The SiO2/SiC interface fabricated by wet-ROA, with 10 MV·cm^-1 in the breakdown field strength of oxide film, 2.46 eV in the barrier height of SiO2/SiC, 10^11 eV^-1·cm^-2 in the interface trap density, can meet the reliability requirement in fabricating devices.

关 键 词：4H-SIC MOS电容 湿氧二次氧化退火 SiO2/SiC界面 

分 类 号：TN303[电子电信—物理电子学]