双重图形技术的优化设计  

Optimization design for double patterning technology

作　　者：潘意杰[1] 陈晔[1] 

机构地区：[1]浙江大学超大规模集成电路研究所,浙江杭州310027

出　　处：《机电工程》2008年第12期35-38,共4页Journal of Mechanical & Electrical Engineering

摘　　要：作为集成电路光刻设计下一节点发展的候选之一,双重图形技术(DPT)面临的诸多复杂过程将影响其在制造领域的迅速应用,其中最突出的因素是设计的复杂度和数据量急剧增长。通过分析版图分解问题和光学邻近校正(OPC)中的信息重用,在重分解修正后的版图与前次OPC数据-分段和段偏移量之间建立了关联,并进行了相关实验。实验结果表明,在保证版图校正精确度的同时,可节省大量的运行时间,同时也有效地缩短了DPT的流程。As one of candidates for next node in lithography of integrated circuit （IC） , double patterning technology （DPT） has complicated process steps that may prevent it from being utilized in production. The most concerned factor is that its complexity and data volume increase dramatically. By analyzing decomposition problems and optical proximity correction （OPC） reuse scheme based on segments, a relationship was set up between changed layout from re-split and previous OPC data, namely fragmentation and offset information. Experiments are carried out and show that a large amount of runtime is saved while keeping the same satisfied results and the circle in DPT is shortened efficiently.

关 键 词：可制造性设计 双重图形技术 光学邻近校正 分辨率增强技术 重用 

分 类 号：TN305.7[电子电信—物理电子学]